Hspice manual diode

be reproduced, transmitted, or translated, in any form or by any means, electronic, mechanical, manual, optical, or otherwise, without prior written permission of Synopsys, Inc., or as expressly provided by the license agreement. Right to Copy Documentation.  · HSPICE® MOSFET Models Manual vii X Contents LEVEL 5 IDS Model The HSPICE MOS LEVEL 6 model is based on the ASPEC, MSINC, and ISPICE MOSFET model equations and has been enhanced by Meta-Software. Different versions of the model are invoked with the switch parameter UPDATE. www.doorway.ru: www.doorway.ru13 9 Thu Jul 23 Using Diodes Specifying Junction Diodes Star-Hspice Manual, Release The periphery junction parameter is multiplied by M, the multiplier parameter, to scale the dimensionless periphery junction. PJeff= PJ ⋅M PJeff is then used to scale CJP, the zero-bias junction capacitance, and theFile Size: KB.

www.doorway.ru: www.doorway.ru16 1 Thu Jul 23 Star-Hspice Manual, Release Chapter 15 Introducing MOSFET A MOSFET is defined by the MOSFET model and element parameters, and two submodels selected by the CAPOP and ACM model parameters. The CAPOP model parameter specifies the model for the MOSFET gate capacitances. The. HSPICE® User Guide: Simulation and Analysis Version B, September HSPICE® Elements and Device Models Manual Version X, September

Ths manual describes standard models that you can use when simulating your circuit designs in HSPICE or HSPICE RF: □. Passive devices. □. Diodes. SPICE diode model includes all the P{N junction related equations and parameters. Therefore, diodes are used to simulate circuits with P{N junction. AIM SPICE CIRCUIT SIMULATION GUIDE AIM-Spice Reference Manual, va The table below shows the ideal diode model parameters for each diode.